Pc1d front surface recombination velocity

#Pc1d front surface recombination velocity series#

The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 в€C to 950 в€C. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes.

The Simulation study presented in this article allows faster, simpler, and easier impact analysis of the design considerations on the Si solar cell wafer fabrications with increased performance. cm bulk lifetime of 2 ms emitter (n+) doping concentration of 1Г—1020 cmв€’3 and shallow back surface field doping concentration of 1Г—1018 cmв€’3 surface recombination velocity maintained in the range of 102 and 103 cm/s obtained a solar cell efficiency of 19%.Inferences from the results indicated that the bulk resistivity of 1 О© In this study, the influence of various parameters like the thickness of the absorber or wafer, doping concentration, bulk resistivity, lifetime, and doping levels of the emitter and back surface field, along with the surface recombination velocity (front and back) on solar cell efficiency was investigated using PC1D simulation software. Improving solar cell efficiency is considered a prerequisite to reinforcing silicon solar cellsвЂ™ growth in the energy market. Solar energy is considered a vital energy source that addresses this demand in a cost-effective and environmentally friendly manner. Finally, the roadmap of the solar cell efficiency for an industrial PERC technology up to 24% is presented, with the aim of providing a potential guideline for industrial researchers.Expeditious urbanization and rapid industrialization have significantly influenced the rise of energy demand globally in the past two decades.

#Pc1d front surface recombination velocity series#

The data include: i) PC2D simulations on J 02, ii) the calculation of series resistance and back surface recombination velocity (BSRV) on the rear side metallization of PERC cell for the case of a point contact, and iii) the PC1D simulation on the cumulative photo-generation and recombination along the distance from the front surface. Aside from the information already presented in Huang et al., 2017, here we provide data related to Sectin 3 in Huang et al., 2017 concerning the analysis of the recombination lossesЧі mechanisms by PC1D V5.9 and PC2D simulations (Clugston and Basore, 1997, Basore and Cabanas-Holmen, 2011, Cabanas-Holmen and Basore, 2012 and Cabanas-Holmen and Basore, 2012.), ,, on our current industrial Al 2O 3 PERC cell. This data article is related to our recently published article (вЂ20.8% industrial PERC solar cell: ALD Al 2O 3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%вЂ™, Huang et al., 2017 ) where we have presented a systematic evaluation of the overall cell processing and a cost-efficient industrial roadmap for PERC cells.